Design Of Low Power Ambipolar CNTFET-Based Digital Adders

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Abstract

This device having an intrinsic channel and Schottky barrier contacts have been taken into consideration because of the ongoing downscaling of MOSFETs. These transistors are ambipolar, which means that depending on the biasing circumstances, they can operate as either n-type or p-type devices. Due to their unique property of controlled polarity, Carbon Nanotube Field Effect Transistors (CNTFETs) are widely regarded as a possible candidate for future nanoscale transistor devices. As a result, ambipolarity gates based on CNTFETs require far fewer transistors in their circuit architecture than universal gates based on CMOS. In this study, we suggest building ambipolar CNTFET-based RCAs with universal gates (NAND and NOR) that have lower gate and power requirements than traditional CMOS libraries. Functional simulation utilizing Stanford CNTFET models in H- H-spice tools demonstrates the circuit's viability.

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Keywords

CMOS Ambipolarity, MOSFETs, Carbon Nano-Tube, NAND, NOR, Full Adder, RCAs