A 406.08pW CMOS Temperature Sensor with Sensing Range 20°C to 100 °C

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Abstract

This proposed article introduces a design for a low-energy temperature sensor that removes the need for bipolar junction transistors (BJTs). As an alternative, the sensor leverages the temperature dependence of MOSFETs' threshold voltage, simplifying the circuit layout and decreasing power consumption. The proposed sensor structure uses five transistors running inside the subthreshold region, ensuring ultra low energy operation. The design has been extensively simulated and demonstrated using the Cadence simulation environment with the gpdk 90nm CMOS generation library. The circuit operates with an ultra-low supply voltage of ±0.1V, making it especially suitable for low-strength applications. The sensor is specially optimized for on-chip thermal sensing inside a temperature variety of -20°C to +100°C, protecting a broad spectrum of operating situations. one of the key features of this design is its remarkably low power intake, that is measured to be only 406.08 pW, and only inaccuracy of ±0.1°C, making it a remarkable desire for strength-restrained environments consisting of wearable electronics, implantable medical devices, and IoT sensors. The simplicity of the layout, blended with its electricity performance, underscores its potential for integration into cutting-edge low-electricity ICs, wherein thermal monitoring is essential for overall performance optimization and reliability assurance.

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Keywords

CMOS Temperature Sensor; Smart Sensor; Low Power; Pico Watt; weak Inversion Region; Thermal management; IoT