Thickness Dependency Analysis of IGZO-Based Thin Film Transistor

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Abstract

This paper highlights the thin film transistors used in the latest applications and devices. The working principle of thin film transistors with various device structures can be used to fabricate thin film transistors. Progress in the latest materials that are being used in applications like LCDs, sensors, RFID tags, Displays, etc. The remarkable characteristics of Indium-Gallium-Zinc Oxide (IGZO) thin films, for instance, their transparency and high mobility, have generated significant interest in the application part of Thin-Film Transistors (TFTs). The operation of a-IGZO TFTs taking four different insulators [Si3N4, SiO2, HfO2, and Al2O3] into consideration by varying insulator thicknesses is studied by simulating it over Silvaco [Atlas] TCAD Tool.

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Keywords

TFT; amorphous-IGZO; Insulator; Simulation; MOSFET; AMOLED; OLED