Performance Comparison with variation in VDD for Planar FET, FinFET and CNFET based 6T SRAM

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Abstract

Static Random Access Memory (SRAM) is a type of Random Access Memory (RAM), which makes use of latching circuitry (flip-flops) to store each bit. The term static refers to the fact that data must be periodically refreshed. SRAM is very fast and hence forms an integral part of the Embedded Cache Memory and the internal registers of a CPU. This paper presents a performance comparison for Planar FET, FinFET, CNFET and NWFET based 6T SRAM cell. All simulations are done using HSPICE. The parameters such as Read Delay, Write Delay and Power Delay Product are considered for Performance comparison.

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Keywords

CNFET; FinFET; NWFET; Power Delay Product; Read Delay; SRAM; Write Delay